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STTH200L06TV1 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH200L06TV1 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISUM6093 eq STTH200L06TV1 Ultrafast Diode www.iscsemi.com 1 DESCRIPTION · Ultrafast switching · Low reverse current · Low thermal resistance APPLICATIONS · Uninterruptible Power Supply (UPS) inverters · DC-DC converters · Switch mode power supplies (SMPS) ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRRM Recurrent Peak Reverse Voltage 600 V IF(RMS) RMS forward current 180 A IF(AV) Average forward current,δ = 0.5 Tc = 65 °C, per diode 100 A Tc = 35 °C, per diode 120 IFSM Surge non repetitive forward current tp = 10 ms sinusoida 800 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case per Diode 0.6 ℃ /W Rth j-c Thermal Resistance,Junction to Case Total 0.35 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF Diode Forward Voltage IF= 100A,TJ=25℃ -- -- 1.55 V IF= 100A,TJ=150℃ -- -- 1.20 V IR Reverse Current VR= VRRM;TJ=25℃ -- -- 100 uA VR= VRRM;TJ=125℃ -- -- 1 mA |
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