OM6025SC - OM6032SC
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ELECTRICAL CHARACTERISTICS:
OM6027SC, OM6028SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
V(BR)DSS
1000
-
-
Vdc
Zero Gate Voltage Drain
IDSS
mAdc
(VDS = 1000 V, VGS = 0)
-
-
0.25
(VDS = 1000 V, VGS = 0, TJ = 125° C)
-
-
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
nAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
VGS(th)
Vdc
(VDS = VGS, ID = 0.25 mAdc
2.0
3.0
4.0
(TJ = 125° C)
1.5
-
3.5
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc)
rDS(on)
-
-
1.3
Ohm
Drain-Source On-Voltage (VGS = 10 Vdc)
VDS(on)
Vdc
(ID = 10 A)
--
15
(ID = 5 A, TJ = 125° C)
-
-
15.3
Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc)
gFS
5.0
-
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
Ciss
-
3900
-
pF
Output Capacitance
f = 1.0 MHz)
Coss
-
300
-
Transfer Capacitance
Crss
-65-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
-40-
ns
Rise Time
(VDD = 250 V, ID = 5 A,
tr
-
100
-
Turn-Off Delay Time
Rgen = 4.3 ohms)
td(off)
-
100
-
Fall Time
tf
-
100
-
Total Gate Charge
(VDS = 400 V, ID = 10 A,
Qg
-
100
140
nC
Gate-Source Charge
VGS = 10 V)
Qgs
-20-
Gate-Drain Charge
Qgd
-40-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
VSD
-
-
1.5
Vdc
Forward Turn-On Time
(IS = 10 A, d/dt = 100 A/µs)
ton
**
ns
Reverse Recovery Time
trr
-
600
1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
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