FS3KMA-5A datasheet(2/4 Pages) POWEREX

2 / 4 page

Jan. 2000

MITSUBISHI Nch POWER MOSFET

FS3KMA-5A

HIGH-SPEED SWITCHING USE

PRELIMINARY

Notice:

This

is not

a final

specification.

Some

parametric

limits

are subject

to change.

ELECTRICAL CHARACTERISTICS (Tch = 25

°C)

PERFORMANCE CURVES

V (BR) DSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

µA

Ω

°C/W

250

—

2.0

—

3.0

1.5

2.25

2.5

300

1.5

—

±0.1

4.0

2.0

3.0

—

2.0

5.0

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

ID = 1mA, VGS = 0V

VGS =

±20V, VDS = 0V

VDS = 250V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 1.5A, VGS = 10V

ID = 1.5A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 150V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50

Ω

IS = 1.5A, VGS = 0V

Channel to case

200

100

150

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (

°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

10–1

100

101

35 7

102

35 7

TC = 25

°C

Single Pulse

100

µs

tw =

µs

1ms

10ms

VGS = 20V

PD = 25W

TC = 25

°C

Pulse Test

10V

0.4

0.8

1.2

1.6

2.0

02468

VGS = 20V

TC = 25

°C

Pulse Test

10V

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