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IRF7343IPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7343IPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  N-Ch P-Ch VDSS 55V -55V RDS(on) 0.050Ω 0.105Ω HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 07/07/06 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated IRF7343IPbF Description D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Max. N-Channel P-Channel Units VDS Drain-Source Voltage 55 -55 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7 IDM Pulsed Drain Current 38 -27 PD@TA = 25°C Maximum Power Dissipation 2.0 W PD@TA = 70°C Maximum Power Dissipation 1.3 W EAS Single Pulse Avalanche Energy 72 114 mJ IAR Avalanche Current 4.7 -3.4 A EAR Repetitive Avalanche Energy 0.20 mJ VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter A Absolute Maximum Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance www.irf.com 1 l Lead-Free SO-8 PD - 96088 |
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