Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

60N06 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 60N06
Description  60 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

60N06 Datasheet(HTML) 2 Page - Unisonic Technologies

  60N06 Datasheet HTML 1Page - Unisonic Technologies 60N06 Datasheet HTML 2Page - Unisonic Technologies 60N06 Datasheet HTML 3Page - Unisonic Technologies 60N06 Datasheet HTML 4Page - Unisonic Technologies 60N06 Datasheet HTML 5Page - Unisonic Technologies 60N06 Datasheet HTML 6Page - Unisonic Technologies 60N06 Datasheet HTML 7Page - Unisonic Technologies 60N06 Datasheet HTML 8Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
60N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-121.A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGS
±
20
V
TC = 25℃
60
A
Continuous Drain Current
TC = 100℃
ID
39
A
Drain Current Pulsed (Note 1)
IDM
120
A
Single Pulsed (Note 2)
EAS
1000
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
180
mJ
Total Power Dissipation
PD
120
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal Resistance Junction-Ambient
θJA
62.5
℃
/W
Thermal Resistance Junction-Case
θJC
1.25
℃
/W
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
60
V
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
Forward
VGS = 20V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -20V, VDS = 0 V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 30 A
14
18
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
2000
pF
Output Capacitance
COSS
400
pF
Reverse Transfer Capacitance
CRSS
VGS = 0V, VDS =25V, f = 1MHz
115
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
12
30
ns
Rise Time
tR
11
30
ns
Turn-Off Delay Time
tD(OFF)
25
50
ns
Fall Time
tF
VDD=30V, ID=60A, RL=0.5Ω,
VGS=10V (Note 4, 5)
15
30
ns
Total Gate Charge
QG
39
60
nC
Gate-Source Charge
QGS
12
nC
Gate-Drain Charge (Miller Charge)
QGD
VDS = 30V, VGS = 10 V
ID = 60A (Note 4, 5)
10
nC



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com