TPCF8301 datasheet(5/7 Pages) TOSHIBA

5 / 7 page

TPCF8301

2006-11-16

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Total gate charge Qg (nC)

Dynamic input/output characteristics

−0.1

−1

−10

−100

100

1000

10000

Ciss

Coss

Crss

Common source

VGS = 0 V

= 1 MHz

= 25°C

−0.0

−80

−40

120

160

−0.5

−1.0

−1.5

−2.0

Common source

VDS = −10 V

ID = −200 μA

Pulse test

120

160

0.4

0.8

1.2

1.6

(4)

(1)

(3)

(2)

Device mounted on a glass-epoxy

board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual

operation (Note 3b)

Device mounted on a glass-epoxy

board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual

operation (Note 3b)

= 5 s

−1

−10

−100

0.4

0.8

1.2

1.6

2.0

Common source

= 25°C

Pulse test

VGS = 0 V

−1

−1.8

−4.5

−2.5

−2

−4

−6

−8

−10

−4

−8

−12

−16

−20

−2

−4

−6

−8

−10

VDS

−4 V

−8 V

VDD = −16 V

VGS

Common source

ID = −2.7 A

= 25°C

Pulse test

−80

−40

120

160

100

150

200

250

300

Common source

Pulse test

VGS = −1.8 V

−2.5 V

−4.5 V

ID = −0.7, −1.4, −2.7 A

−0.7 A

ID = −2.7 A

ID = −1.4 A

−0.7 A

ID = −1.4 A

TPCF8301 Datasheet(PDF) 5 Page - Toshiba Semiconductor

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