TPCP8401

2006-11-13

2

N-ch

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

Gate-source voltage

±10

V

DC

(Note 1)

0.1

Drain current

Pulse

(Note 1)

0.2

A

Channel temperature

150

°C

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.12

mJ

Channel temperature

150

°C

This transistor is an electrostatic-sensitive device. Handle with caution.

Characteristics

Symbol

Rating

Unit

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient

(t

= 5 s)

(Note 2a)

63.8

°C/W

Thermal resistance, channel to ambient

(t

= 5 s)

(Note 2b)

125

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Mounted on FR4 board (glass epoxy, 0.8mm thick, Cu area: 25.4mm2) (t = 5s)

(b) Mounted on FR4 board (glass epoxy, 0.8mm thick, printed minimum pad dimensions: 25.4mm2) (t = 5s)

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: “●” on the lower left of the marking indicates pin 1.

“*” shows the lot number, which consists of three digits. The first digit denotes the year of manufacture,

expressed as the last digit of the calendar year; the next two digits denote the week of manufacture.

Week of manufacture

(01 for the first week of year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)