TPCP8505

2006-11-13

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

TPCP8505

High-Speed Switching Applications

DC-DC Converter Applications

Characteristic

Symbol

Rating

Unit

Collector-base voltage

100

V

80

Collector-emitter voltage

50

V

Emitter-base voltage

7

V

DC (Note 1)

3.0

Collector current

Pulse (Note 1)

5.0

A

Base current

0.3

A

t = 10s

3.0

Collector power

dissipation (t = 10 s)

DC

1.25

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.

Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1A

Weight: 0.017 g (typ.)

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1.Collector

2.Collector

3.Collector

4.Base

5.Emitter

6.Collector

7.Collector

8.Collector