TPCP8507 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

TPCP8507

2006-11-13

Figure 1. Circuit configuration (top view)

Figure 2. Marking (Note 4)

Note 4:

on lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 180 V, IE = 0

⎯

100

Emitter cutoff current

IEBO

VEB = 7 V, IC = 0

⎯

100

Collector-emitter breakdown voltage

V (BR) CBO

IC = 1 mA, IB = 0

180

⎯

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

120

⎯

hFE(1)

VCE = 2 V, IC = 0.1A

120

⎯

300

DC current gain

hFE(2)

VCE = 2 V, IC = 0.3A

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 0.3 A, IB = 0.01A

⎯

0.14

Base-emitter saturation voltage

VBE (sat)

IC = 0.3 A, IB = 0.01A

⎯

1.1

Storage time

⎯

0.1

⎯

Storage time

tstg

⎯

1.5

⎯

Switching time

Fall time

See Figure 3 circuit diagram.

VCC ≅ 72 V, RL = 240 Ω

IB1

= −IB2 = 10mA

⎯

0.2

⎯

μs

Figure 3. Switching Time Test Circuit & Timing Chart

Duty cycle

< 1 %

IB1

IB2

OUT

VCC

IB1

μs

IB2

1　 2　 3　 4

8　 7 　6 　 5

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

Type

8507

Lot No.

TPCP8507 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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