TPCP8901

2006-11-13

1

TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)

TPCP8901

Portable Equipment Applications

Switching Applications

• Small footprint due to small and thin package

Rating

Characteristics

Symbol

PNP

NPN

Unit

Collector-base voltage

−50

100

V

Collector-emitter voltage

−50

50

V

Emitter-base voltage

−7

7

V

DC (Note 1)

−0.8

1.0

Collector current

Pulse (Note 1 )

−5.0

5.0

A

Base current

−100

100

mA

Single-device

operation

1.48

Collector power

dissipation (t = 10s)

Single-device

value at dual

operation

0.80

W

Single-device

operation

0.83

Collector power

dissipation (DC)

Single-device

value at dual

operation

0.48

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Please use devices on condition that the junction temperature is below 150℃.

Icp=±5A (@ t≦100μs)

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1C

Weight: 0.017 g (typ.)

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1.Emitter1

2.Base1

3.Emitter2

4.Base2

5.Collector2

6.Collector2

7.Collector1

8.Collector1