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TPS830F Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPS830F Datasheet(HTML) 5 Page - Toshiba Semiconductor |
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5 / 6 page ![]() TPS830(F) 2007-10-01 5 Relative L – Ta (typ.) Ambient temperature Ta (°C) 0 1.2 −40 −20 0 20 40 60 1.0 0.8 0.6 0.4 0.2 80 VCC = 5 V ICC – Ta (typ.) Ambient temperature Ta (°C) 1.6 0 −50 −25 0 25 50 75 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100 ICCL ICCH VCC = 5 V Radiation Pattern Characteristics (typ.) Relative transmission range Radiation angle Vertical (Ta = 25°C) 0 0.2 0.4 0.6 0.8 1.0 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 10° 20° 30° 40° 50° 60° 70° 80° 90° Radiation Pattern Characteristics (typ.) Relative transmission range Radiation angle Horizontal (Ta = 25°C) 0 0.2 0.4 0.6 0.8 1.0 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 10° 20° 30° 40° 50° 60° 70° 80° 90° Carrier Frequency Characteristics (typ.) Frequency (kHz) f0 − 60 0 −1 −2 −3 −4 −5 f0 − 40 f0 − 20 f0 + 20 f0 + 40 f0 + 60 f0 Spectral Response (typ.) Wave length λ (nm) 1.0 0 500 1000 1200 800 600 0.2 0.8 0.6 0.4 700 1100 900 |
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