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GD600HTX65P4S Datasheet(PDF) 8 Page - StarPower Europe AG |
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GD600HTX65P4S Datasheet(HTML) 8 Page - StarPower Europe AG |
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8 / 10 page ![]() GD600HTX65P4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 8/10 Preliminary Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance Fig 11. NTC Temperature Characteristic 0 2 4 6 8 10 12 0 5 10 15 20 25 R G [Ω] Erec Tj=125℃ Erec Tj=150℃ V CC=300V I F=400A V GE=-15V 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 t [s] Diode i: 1 2 3 4 5 r i[K/W]: 0.0106 0.0374 0.0405 0.0647 0.0170 τ i[s]: 0.0005 0.02 0.058 0.45 2.19 0.1 1 10 100 0 30 60 90 120 150 T C [ oC] |
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