Si PIN photodiode

S7797, S5052, S8255, S5573

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho,

Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.:

19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

Cat.No.KPIN1047E01

Apr. 2001 DN

Chip position accuracy with respect to the

package dimension marked *

X, Y

≤±0.2

θ≤±2 ˚

6˚

8˚

4.2 MAX.

(INCLUDINGBURR)

3.8 *

3.0

1.2

0.45

2.54

0.45

0.7

2.2 ± 0.15

4.0 ± 0.2

R1.5

LENS CENTER

0

0.1

0.2

0.3

0.4

0.7

200

400

600

800

1000

WAVELENGTH (nm)

(Typ. Ta=25 ˚C)

0.5

0.6

S5052

S7797

S5573, S8255

s Spectral response

s Dark current vs. reverse voltage

KPINB0176EA

100 fA

1 pA

10 pA

100 pA

0.01

0.1

1

10

100

REVERSE VOLTAGE (V)

(Typ. T

S5573

S5052

S8255

S7797

KPINB0177EA

1 pA

10 pA

100 pA

1 nA

10 nA

-20

0

20

40

60

AMBIENT TEMPERATURE (˚C)

(Typ.)

80

100 nA

s Dark current vs. ambient temperature

s Terminal capacitance vs. reverse voltage

1 pF

10 pF

0.1

1

10

100

REVERSE VOLTAGE (V)

S8255

S5573

S5052

S7797

(Typ. Ta=25 ˚C, f=1 MHz)

90˚

80˚

70˚

60˚

50˚

30˚

RELATIVE SENSITIVITY

40˚

20˚

10˚

0˚

10˚

20˚

90˚

80˚

70˚

60˚

50˚

30˚

40˚

80 %

20 %

40 %

60 %

(Typ. Ta=25 ˚C)

100 %

S5573

S8255

S5052

S7797

s Directivity

KPINB0178EA

KPINB0179EA

KPINB0180EA

KPINA0032EA

s Dimensional outline

(unit: mm, tolerance unless otherwise noted: ±0.1)