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FX20ASJ-2 Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # FX20ASJ-2
Description  Pch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

FX20ASJ-2 Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Jan.1999
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.20
0.25
–2.0
10.3
2360
198
99
13
30
139
74
–1.0
—
100
—
±0.1
–0.1
–2.0
0.26
0.32
–2.6
—
—
—
—
—
—
—
—
–1.5
3.57
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –50V, ID = –10A, VGS = –10V, RGEN = RGS = 50
Ω
IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/
µs
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
0
–10
–
20
–
30
–
40
–
50
0
–
10
–
20
–
30
–
40
–
50
PD = 35W
VGS =
–10V
Tc = 25°C
Pulse Test
–6V
–4V
–3V
–5V
–8V
0
–
4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
–4V
–3V
Tc = 25°C
Pulse Test
–100
–2
–3
–5
–7
–100 –2
–101
–3 –5 –7
–2
–102
–3 –5 –7
–2
–3
–101
–2
–3
–5
–7
–102
–7
–2
–5
–2 –3 –5 –7
–2
tw =
TC = 25°C
Single Pulse
100
µs
10ms
1ms
DC
10
µs
–5V
–6V
–10V
VGS =
PD = 35W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-2
HIGH-SPEED SWITCHING USE



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