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ELECTRICAL CHARACTERISTICS(TA = 25℃ Unless otherwise noted )

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Static Parameters

V(BR)DSS

Drain-Source Breakdown Voltage

VGS =0V,ID =-250μA

-30

V

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID =-250μA

-1.0

-3.0

V

IGSS

Gate Leakage Current

VDS =0V,VGS=±20V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS =-30V,VGS =0V

-1

μA

VDS =-30V,VGS =0V

TJ =55℃

-5

ID(ON)

On-State Drain Current

VDS ≦-5V,VGS ≦-10V

-25

A

RDS(ON)

Drain-source On-Resistance

VGS =-10V,ID=-5.2A

VGS =-4.5V, ID=-4.0A

48

74

60

90

mΩ

Gfs

Forward Transconductance

VDS =-10V,ID =-5.2A

10

S

Source-Drain Doide

Is

Diode forward Current (Max.)

2.6

A

VSD

Diode Forward Voltage

IS=-2.0A,VGS=0V

-0.8

-1.2

V

Dynamic Parameters

Qg

Total Gate Charge

VDS =-15V,VGS =-10V

ID =-5.0A

15

10

nC

Qgs

Gate-Source Charge

4.0

Qgd

Gate-Drain Charge

2.0

Ciss

Input Capacitance

VDS =-15V,VGS =0V

f =1MHz

680

pF

Coss

Output Capacitance

120

Crss

Reverse Transfer Capacitance

75

td(on)

Turn-On Time

VDD =-15V,RL =15Ω

ID =-1.0A,VGEN =-10V

RG =6Ω

7.0

15

nS

tr

10

20

td(off)

Turn-Off Time

40

80

tf

20

40

Note : 1. Pulse test: pulse width <= 300us, duty cycle<= 2%

2. Static parameters are based on package level with recommended wire-bonding

AM9435

Axelite Confidential Materials, do not copy or distribute without written consent.

Rev.1.1 May 19, 2016