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Rev.1.3 Sep.11, 2019

AM9569D



ABSOLUTE MAXIMUM RATINGS

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current, VGS @ 10V

ID@TC=25°C

-14

A

Continuous Drain Current, VGS @ 10V

ID@TC=100°C

-8.6

A

Pulsed Drain Current1

IDM

-40

A

Total Power Dissipation

PD@TC=25°C

26

W

Linear Derating Factor

0.21

W/°C

Storage Temperature Range

TSTG

-55 to 150

°C

Operating Junction Temperature Range

TJ

-55 to 150

°C



THERMAL DATA

Characteristics

Symbol Rating Unit

Maximum Thermal Resistance, Junction-case

Rthj-c

4.8

°C/W

Maximum Thermal Resistance, Junction-ambient (PCB mount)3

Rthj-a

62.5 °C/W

Maximum Thermal Resistance, Junction-ambient

Rthj-a

110 °C/W



ELECTRICAL CHARACTERISTICS

(VCC = 5V, TA=25°C, unless otherwise specified)

Characteristics

Symbol

Conditions

Min Typ Max Units

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250uA

-40 -

-

V

Breakdown Voltage Temperature

Coefficient

ΔBVDSS/ΔTj

Reference to 25°C,

ID=-1mA

- -0.03 -

V/°C

Static Drain-Source

On-Resistance2

RDS(ON)

VGS=-10V, ID=-10A

-

-

90 mΩ

VGS=-4.5V, ID=-6A

130 mΩ

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-

-3

V

Forward Trans conductance

gfs

VDS=-10V, ID=-10A

-

7

-

S

Drain-Source Leakage Current

IDSS

VDS=-40V, VGS=0V

-

-

-1

uA

Drain-Source Leakage Current

(Tj=125°C)

VDS=-32V, VGS=0V

-250 uA

Gate-Source Leakage

IGSS

VGS= +20V, VDS=0V

±100 nA

Total Gate Charge2

Qg

ID=-10A

VDS=-30V

VGS=-4.5V

-

7

12

nC

Gate-Source Charge

Qgs

-

2

-

nC

Gate-Drain ("Miller") Charge

Qgd

-

4

-

nC

Turn-on Delay Time2

td(on)

VDS=-20V

ID=-10A

-

8

-

sn

Rise Time

tr

-

20

-

ns