Si PIN photodiode array

S8558

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.

Cat. No. KMPD1062E01

Aug. 2006 DN

s Dimensional outline (unit: mm)

KMPDA0144EA

0

0.2

0.4

0.8

0.7

0.5

0.3

0.1

200

400

600

800

1200

1000

(Typ. Ta=25 ˚C)

0.6

QE=100 %

1 pA

10 pA

100 pA

1 nA

0.01

0.1

1

10

100

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

1 pF

10 pF

100 pF

1 nF

0.1

1

10

100

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

1 MHz

10 MHz

100 MHz

1

10

100

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C,

P 0.8 × 15 = 12.0

P 1.27 × 8 = 10.16

0.6

13.70

15.35

INDEX MARK

0.4

0.7 × 2.0 (× 16 ELEMENTS)

ACTIVE AREA

(R0.15)

(R0.25)

INDEX MARK

0.4

Tolerance unless otherwise

noted: ±0.25

Chip position accuracy with

respect to the package center

X, Y

≤ ±0.3

CH1

CH16

1

3

5

7

9

11

13

15

KC

16

14

12

10

8

6

4

2

NC

SILICONE RESIN

PHOTOSENSITIVE

SURFACE

s Dark current vs. reverse voltage

s Spectral response

KMPDB0193EA

KMPDB0194EA

s Terminal capacitance vs. reverse voltage

s Cut-off frequency vs. reverse voltage

KMPDB0195EA

KMPDB0196EA

2