1SS154

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS154

UHF~S Band Mixer/Detector Applications

• Small package.

Characteristics

Symbol

Rating

Unit

Reverse voltage

6

V

Forward current

30

mA

Junction temperature

125

°C

Storage temperature range

−30~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

6

⎯

⎯

V

Reverse current

⎯

⎯

0.5

μA

Forward voltage

⎯

⎯

0.35

V

Forward voltage

⎯

0.5

⎯

V

Total capacitance

⎯

0.8

⎯

pF

Marking

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

1-3G1A

Weight: 0.012 g (typ.)