1SS293

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS293

Low Voltage High Speed Switching

Low forward voltage

Low reverse surrent

Small package

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

45

V

Reverse voltage

40

V

Maximum (peak) forward current

300

mA

Average forward current

100

mA

Power dissipation

P

300

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.28

―

―

―

0.36

―

Forward voltage

―

―

0.54

0.60

V

Reverse current

―

―

―

5

μA

Total capacitance

―

―

18

25

pF

Unit: mm

JEDEC

―

EIAJ

SC−61

TOSHIBA

1−4E2D

Weight: 0.13g