1SS306

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS306

High Voltage, High Speed Switching Applications

Low forward voltage

Small total capacitance

Small package

: SC-61

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

250

V

Reverse voltage

200

V

Maximum (peak) forward current

300 (*)

mA

Average forward current

100 (*)

mA

Surge current (10ms)

2 (*)

A

Power dissipation

P

150

mW

Junction temperature

125

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Unit rating. Total rating = unit rating × 1.5

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.72

1.0

Forward voltage

―

―

0.9

1.2

V

―

―

―

0.1

Reverse current

―

―

―

1.0

μA

Total capacitance

―

―

1.5

3.0

pF

Reverse recovery time

―

Fig.1

―

30

60

ns

JEDEC

―

EIAJ

SC-61

TOSHIBA

2-3J1A

Weight: 0.013g

Unit: mm