1SS307

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS307

General Puropose Rectifier Applications

Low forward voltage

Low reverse current

Small total capacitance

Small package

: SC−59

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

35

V

Reverse voltage

30

V

Maximum (peak) forward current

300

mA

Average forward current

100

mA

Surge current (10ms)

2

A

Power dissipation

P

150

mW

Junction temperature

125

°C

Storage temperature

−55

∼125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Forward voltage

―

―

1.0

1.3

V

Reverse current

―

―

―

10

μA

Total capacitance

―

―

3.0

6.0

pF

Marking

JEDEC

TO−236MOD

EIAJ

SC−59

TOSHIBA

1−3G1B

Weight: 0.012g(typ.)

Unit: mm