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FX6ASJ-2 Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # FX6ASJ-2
Description  Pch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

FX6ASJ-2 Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Jan.1999
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.46
0.55
–1.38
4.7
1110
108
44
9
8
72
33
–1.0
—
80
—
±0.1
–0.1
–2.0
0.58
0.72
–1.74
—
—
—
—
—
—
—
—
–1.5
4.17
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –3A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –5V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –50V, ID = –3A, VGS = –10V, RGEN = RGS = 50
Ω
IS = –3A, VGS = 0V
Channel to case
IS = –6A, dis/dt = 100A/
µs
PERFORMANCE CURVES
0
8
16
24
32
40
0
200
50
100
150
0
–2
–
4
–
6
–
8
–
10
0
–
4
–
8
–
12
–
16
–
20
PD = 30W
VGS =
–10V
Tc = 25°C
Pulse Test
–5V
–2.5V
–3V
–3.5V
–4V
0
–
1.0
–2.0
–3.0
–4.0
–5.0
0
–2–4–6–8
–10
–4V
–3V
–2.5V
–5V
–10V
VGS =
–10–1
–5
–7
–100
–2
–3
–5
–7
–100 –2
–101
–3 –5 –7
–2
–102
–3 –5 –7
–2
–3
–101
–2
–3
–5
–7
–5
–2 –3 –5 –7
–2
tw =
TC = 25°C
Single Pulse
100
µs
10ms
1ms
DC
–3.5V
10
µs
PD = 30W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE



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