1SS352

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS352

Ultra High Speed Switching Application

Small package

Low forward voltage

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

85

V

Reverse voltage

80

V

Maximum (peak) forward current

200

mA

Average forward current

100

mA

Surge current (10ms)

1

A

Power dissipation

P

200 (*)

mW

Junction temperature

125

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(*) Mounted on a glass epoxy circuit board of 20

× 20mm,

pad dimension of 4

× 4mm.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.62

―

―

―

0.75

―

Forward voltage

―

―

0.98

1.20

V

―

―

―

0.1

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

0.5

3.0

pF

Reverse recovery time

―

―

1.6

4.0

ns

JEDEC

―

EIAJ

―

TOSHIBA

1-1E1A

Weight: 0.004g

Unit: mm