1SS357

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS357

Low Voltage High Speed Switching

Low forward voltage

Low reverse current

Small package

: SC-70

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

45

V

Reverse voltage

40

V

Maximum (peak) forward current

300

mA

Average forward current

100

mA

Surge current (10ms)

1

A

Power dissipation

P

200*

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Mounted on a glass epoxy circuit board of 20 × 20mm,

pad dimension of 4 × 4mm.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.28

―

―

―

0.36

―

Forward voltage

―

―

0.54

0.60

V

Reverse current

―

―

―

5

μA

Total capacitance

―

―

18

25

pF

(Top View)

Marking

JEDEC

―

EIAJ

―

TOSHIBA

1-1E1A

Weight: 0.004g

Unit in mm