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2SC5088 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC5088 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() 2SC5088 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE (Note 1) VCE = 10 V, IC = 20 mA 80 ⎯ 240 Output capacitance Cob ⎯ 1.1 1.6 pF Reverse transfer capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ⎯ 0.65 1.05 pF Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Marking Type name M C O 4 3 1 2 hFE rank |
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