1SS367

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS367

High Speed Switching Application

Small package

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

15

V

Reverse voltage

10

V

Maximum (peak) forward current

200

mA

Average forward current

100

mA

Surge current (10ms)

1

A

Power dissipation

P *

200

mW

Junction temperature

125

°C

Storage temperature

−55~125

°C

Operating temperature range

−40~100

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Mounted on a glass epoxy circuit board of 20 × 20 mm

Pad dimension of 4 × 4 mm.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.18

―

―

―

0.23

0.30

Forward voltage

―

―

0.35

0.50

V

Reverse current

―

―

―

20

μA

Total capacitance

―

―

20

40

pF

Marking

JEDEC

―

EIAJ

―

TOSHIBA

1-1E1A

Weight: 0.004g

Unit: mm