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2SC5713 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC5713
Description  Silicon NPN Epitaxial Type High-Speed Switching Applications
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5713 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC5713
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
⎯
⎯
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
⎯
⎯
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 0.5 A
400
⎯
1000
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
200
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 32 mA
⎯
⎯
0.15
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 32 mA
⎯
⎯
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
⎯
28
⎯
pF
Rise time
tr
⎯
110
⎯
Storage time
tstg
⎯
150
⎯
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ∼− 6 V, RL = 3.75 Ω
IB1 = −IB2 = 53 mA
⎯
50
⎯
ns
Marking
Figure 1 Switching Time Test Circuit &
Timing Chart
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%
2
C
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.



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