2SJ338 datasheet(2/3 Pages) TOSHIBA

Part #	2SJ338

Description	Audio-Frequency Power Amplifier Applications

PDF	3 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 3 page

2SJ338

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VDS = 0, VGS = ±20 V

—

±100

Drain−source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0

−180

—

Gate−source cutoff voltage

(Note 3)

V GS (OFF)

VDS = −10 V, ID = −10 mA

−0.8

—

−2.8

Drain−source saturation voltage

VDS (ON)

ID = −0.6 A, VGS = −10 V

—

−1.2

−3.0

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −0.3 A

—

0.7

—

Input capacitance

Ciss

VDS = −10 V, VGS = 0 , f = 1 MHz

—

210

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 , f = 1 MHz

—

Reverse transfer capacitance

Qrss

VDS = −10 V, VGS = 0 , f = 1 MHz

—

Note 3: VGS (OFF) Classification

O: −0.8~−1.6, Y: −1.4~−2.8

This transistor is an electrostatic-sensitive device. Handle with care.

Marking

J338

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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