2SJ464 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

2SJ464

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = −100 V, VGS = 0 V

⎯

−100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−100

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

⎯

−2.0

VGS = −10 V, ID = −9 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = −4 V, ID = −9 A

⎯

120

Forward transfer admittance

⎪Yfs⎪

VDS = −10 V, ID = −9 A

⎯

Input capacitance

Ciss

⎯

2900

⎯

Reverse transfer capacitance

Crss

⎯

480

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

1000

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

170

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

140

⎯

Gate-source charge

Qgs

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −80 V, VGS = −10 V, ID = −18 A

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

⎯

−18

Pulse drain reverse current

(Note 1)

IDRP

⎯

−72

Forward voltage (diode)

VDSF

IDR = −18 A, VGS = 0 V

⎯

1.7

Reverse recovery time

trr

⎯

220

⎯

Reverse recovery charge

Qrr

IDR = −18 A, VGS = 0 V

dIDR/dt = 50 A/μs

⎯

0.97

⎯

μC

Marking

−10 V

0 V

VGS

VDD ∼− −50 V

ID = −9 A

VOUT

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

J464

Part No. (or abbreviation code)

2SJ464 Datasheet(PDF) 2 Page - Toshiba Semiconductor

2SJ464 Datasheet(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL