2SJ507 datasheet(2/3 Pages) TOSHIBA

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2SJ507

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cut−off current

IDSS

VDS = −60 V, VGS = 0 V

—

−100

μA

Drain−source breakdown

voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−60

—

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

—

−2.0

VGS = −4 V, ID = −0.5 A

—

0.72

1.0

Drain−source ON resistance

RDS (ON)

VGS = −10 V, ID = −0.5 A

—

0.5

0.7

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −0.5 A

0.5

1.0

—

Input capacitance

Ciss

—

170

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

Rise time

—

Turn−on time

ton

—

Fall time

—

Switching time

Turn−off time

toff

—

135

—

Total gate charge (Gate−source

plus gate−drain)

—

5.6

—

Gate−source charge

Qgs

—

3.9

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ −48 V, VGS = −10 V,

ID = −1 A

—

1.7

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

−1

Pulse drain reverse current

(Note 1)

IDRP

—

−3

Forward voltage (diode)

VDSF

IDR = −1 A, VGS = 0 V

—

1.5

Reverse recovery time

trr

—

Reverse recovery charge

Qrr

IDR = −1 A, VGS = 0 V

dIDR / dt = 50 A / μs

—

72.5

—

Marking

J507

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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