D2604 datasheet(2/5 Pages) TOSHIBA

Part #	D2604

Description	Silicon NPN Triple Diffused Type (Darlington)

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SD2604

2006-11-21

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 90 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

0.75

―

3.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

110

125

hFE (1)

VCE = 3 V, IC = 2 A

2000

―

15000

DC current gain

hFE (2)

VCE = 3 V, IC = 5 A

1000

―

Collector-emitter saturation voltage

VCE (sat)

IC = 2 A, IB = 4 mA

―

0.9

1.5

Base-emitter saturation voltage

VBE (sat)

IC = 2 A, IB = 4 mA

―

1.5

2.5

Turn-on time

ton

―

0.5

―

Storage time

tstg

―

5.0

―

Switching time

Fall time

IB1 = −IB2 = 4 mA, duty cycle ≤ 1%

―

0.7

―

μs

Marking

20 μs

VCC ≈ 40 V

Output

IB2

IB1

Input

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

D2604

Part No. (or abbreviation code)

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