JDV2S29FS

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S29FS

VCO for UHF Band Radio

• This device is suitable for use in small tuners.

Characteristic

Symbol

Rating

Unit

Reverse voltage

10

V

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

10

⎯

⎯

V

Reverse current

⎯

⎯

1

nA

3.59

⎯

3.87

Capacitance

1.26

⎯

1.4

pF

Capacitance ratio

⎯

2.73

⎯

2.91

⎯

Series resistance

⎯

0.66

0.77

Ω

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight: 0.0006 g (typ.)

0.2

0.1±0.05

0.6±0.05

A

0.48+0.02

-0.03

±0.05

A

M

0.07