MP4025

2006-10-27

1

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

(Four Darlington Power Transistors in One)

MP4025

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive

Load Switching

• Small package by full molding (SIP 10 pins)

• Surge voltage is clamped by zener diode (C-B).

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

60 ± 10

V

Emitter-base voltage

6

V

Input voltage

20

V

DC

1.5

Collector current

Pulse

2.0

A

Collector power dissipation

(1-device operation)

2.0

W

Collector power dissipation

(4-device operation)

4.0

W

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-25A1A

1

10

2

3

R2

R1

4

5

6

7

8

9