MP4212

2006-10-27

1

MP4212

High Power High Speed Switching Applications

H-Switch Driver

• 4-V gate drivability

• Small package by full molding (SIP 10 pin)

• High drain power dissipation (4-device operation)

160 mΩ (typ.) (P-ch)

4.0 S (typ.) (Pch)

Rating

Characteristics

Symbol

Nch

Pch

Unit

Drain-source voltage

60

−60

V

60

−60

V

Gate-source voltage

±20

±20

V

DC

5

−5

Drain current

Pulse

20

−20

A

Drain power dissipation

(1-device operation, Ta = 25°C)

2.0

W

Drain power dissipation

(4-device operation, Ta = 25°C)

4.0

W

Single pulse avalanche energy

(Note 1)

129

273

mJ

Avalanche current

5

−5

A

1-device

operation

0.2

Repetitive avalanche

energy

(Note 2) 4-device

operation

0.4

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Condition fo avalanche energy (single pulse) measurement

Note 2: Repetitive rating; pulse width limited by maximum channel temperature

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-25A1C

Weight: 2.1 g (typ.)