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RN4609 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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RN4609 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page  RN4609 2007-11-01 3 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO ― VCB = −50V, IE = 0 ― ― −100 Collector cut-off current ICEO ― VCE = −50V, IB = 0 ― ― −500 nA Emitter cut-off current IEBO ― VEB = −15V, IC = 0 −0.167 ― −0.311 mA DC current gain hFE ― VCE = −5V, IC = −10mA 70 ― ― ― Collector-emitter saturation voltage VCE (sat) ― IC = −5mA, IB = −0.25mA ― −0.1 −0.3 V Input voltage (ON) VI (ON) ― VCE = −0.2V, IC = −5mA −2.2 ― −5.8 V Input voltage (OFF) VI (OFF) ― VCE = −5V, IC = −0.1mA −1.5 ― −2.6 V Transition frequency fT ― VCE = −10V, IC = −5mA ― 200 ― MHz Collector output capacitance Cob ― VCB = −10V, IE = 0 ― 3 6 pF Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO ― VCB = 50V, IE = 0 ― ― 100 Collector cut-off current ICEO ― VCE = 50V, IB = 0 ― ― 500 nA Emitter cut-off current IEBO ― VEB = 15V, IC = 0 0.167 ― 0.311 mA DC current gain hFE ― VCE = 5V, IC = 10mA 70 ― ― ― Collector-emitter saturation voltage VCE (sat) ― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V Input voltage (ON) VI (ON) ― VCE = 0.2V, IC = 5mA 2.2 ― 5.8 V Input voltage (OFF) VI (OFF) ― VCE = 5V, IC = 0.1mA 1.5 ― 2.6 V Transition frequency fT ― VCE = 10V, IC = 5mA ― 250 ― MHz Collector output capacitance Cob ― VCB = 10V, IE = 0, f = 1 MHz ― 3 6 pF Q1, Q2 Common Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Input resistor R1 ― ― 32.9 47 61.1 kΩ Resistor ratio R1/R2 ― ― 1.92 2.14 2.35 ― |
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