MP4410 datasheet(2/4 Pages) TOSHIBA

2 / 4 page

MP4410

2006-10-27

Marking

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance of channel to

ambient

(4-device operation, Ta = 25°C)

ΣRth (ch-a)

28.4

°C/W

Thermal resistance of channel to case

(4-device operation, Tc = 25°C)

ΣRth (ch-c)

4.46

°C/W

Maximum lead temperature for

soldering purposes

(3.2 mm from case for 10 s)

260

°C

This transistor is an electrostatic-sensitive device. Please handle with caution.

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

―

±10

μA

Drain cut-off current

IDSS

VDS = 60 V, VGS = 0 V

―

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

―

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

―

2.0

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

3.0

5.0

―

ID = 2.5 A, VGS = 4 V

―

0.21

0.31

Drain-source ON resistance

RDS (ON)

ID = 2.5 A, VGS = 10 V

―

0.12

0.16

Ω

Input capacitance

Ciss

―

370

―

Reverse transfer capacitance

Crss

―

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

―

180

―

Rise time

―

Turn-on time

ton

―

Fall time

―

Switching time

Turn-off time

toff

VIN: tr, tf < 5 ns, dutys cycle ≤ 1%

―

170

―

Total gate charge

(gate-source plus gate-drain)

―

Gate-source charge

Qgs

―

Gate-drain (“miller”) charge

Qgd

ID = 5 A, VGS = 10 V, VDD = 48 V

―

10 V

VIN

VDD ≈ 30 V

ID = 2.5 A

VOUT

10 μs

0 V

MP4410

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

MP4410 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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