MP4507

2004-07-01

1

TOSHIBA Power Transistor Module Silicon Triple Diffused Type

(Four Darlington Power Transistors inOne)

MP4507

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive

Load Switching

• Package with heat sink isolated to lead (SIP 12 pins)

• High collector power dissipation (4-device operation)

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

100

−100

V

Collector-emitter voltage

100

−100

V

Emitter-base voltage

5

−5

V

DC

5

−5

Collector current

Pulse

8

−8

A

Continuous base current

0.1

−0.1

A

Collector power dissipation

(1-device operation)

3.0

W

Ta = 25°C

5.0

Collector power

dissipation

(4-device operation)

Tc = 25°C

25

W

Isolation voltage

1000

V

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32B1C

Weight: 6.0 g (typ.)

2

1

R1 R2

6

11

5

R1 ≈ 5 kΩ

8

7

12

R3 R4

4

9

R2 ≈ 200 Ω

R3 ≈ 5 kΩ

R4 ≈ 120 Ω