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2N6576 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6576
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6576 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
2N6576
www.iscsemi.com
1
DESCRIPTION
Collector-Emitter Breakdown Voltage
-V(BR)CEO= 800V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):5V(Max) @IC= 20A
APPLICATIONS
·
Power switching
·
Hammer drivers
·
Series and shunt regulator
·
Audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.46
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current -Continuous
15
A
ICP
Collector Current-Peak
30
A
IB
Base Current
0.25
A
PC
Collector Power Dissipation@TC=25℃
120
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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