MP6901

2004-07-01

1

TOSHIBA Power Transistor Module Silicon Epitaxial Type (Six Darlington Power Transistors in One)

MP6901

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

• Package with heat sink isolated to lead (SIP 12 pins)

• High collector power dissipation (6-device operation)

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

100

−100

V

Collector-emitter voltage

80

−80

V

Emitter-base voltage

5

−5

V

4

−4

Collector current

6

−6

A

Continuous base current

0.4

−0.4

A

Collector power dissipation

(1-device operation)

3.0

W

Ta = 25°C

5.0

Collector power

dissipation

(6-device operation)

Tc = 25°C

25

W

Isolation voltage

1000

V

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32B1D

Weight: 6.0 g (typ.)

3

2

1

R1 R2

6

4

9

11

R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω

8

4

7

10

12

R1 R2