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MJ802G Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ802G
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ802G Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
MJ802G
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 90V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):0.8V(Max) @IC= 7.5A
APPLICATIONS
· Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
30
A
IB
Base Current
7.5
A
PC
Total Power Dissipation
@ TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.87
℃
/W
3


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