RN1102 datasheet(2/8 Pages) TOSHIBA

2 / 8 page

RN1101

∼RN1106

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = 50 V, IE = 0

―

100

Collector cut-off

current

RN1101~1106

ICEO

―

VCE = 50 V, IB = 0

―

500

RN1101

0.82

―

1.52

RN1102

0.38

―

0.71

RN1103

0.17

―

0.33

RN1104

VEB = 10 V, IC = 0

0.082

―

0.15

RN1105

0.078

―

0.145

Emitter cut-off current

RN1106

IEBO

―

VEB = 5 V, IC = 0

0.074

―

0.138

RN1101

―

RN1102

―

RN1103

―

RN1104

―

RN1105

―

DC current gain

RN1106

hFE

―

VCE = 5 V, IC = 10 mA

―

Collector-emitter

saturation voltage

RN1101~1106

VCE (sat)

―

IC = 5 mA, IB = 0.25 mA

―

0.1

0.3

RN1101

1.1

―

2.0

RN1102

1.2

―

2.4

RN1103

1.3

―

3.0

RN1104

1.5

―

5.0

RN1105

0.6

―

1.1

Input voltage (ON)

RN1106

VI (ON)

―

VCE = 0.2 V, IC = 5 mA

0.7

―

1.3

RN1101~1104

1.0

―

1.5

Input voltage (OFF)

RN1105, 1106

VI (OFF)

―

VCE = 5 V, IC = 0.1 mA

0.5

―

0.8

Transition frequency

RN1101~1106

―

VCE = 10 V, IC = 5 mA

―

250

―

MHz

Collector output

capacitance

RN1101~1106

Cob

―

VCB = 10 V, IE = 0,

f = 1 MHz

―

RN1101

3.29

4.7

6.11

RN1102

RN1103

15.4

28.6

RN1104

32.9

61.1

RN1105

1.54

2.2

2.86

Input resistor

RN1106

―

3.29

4.7

6.11

kΩ

RN1101~1104

0.9

1.0

1.1

RN1105

0.0421 0.0468 0.0515

Resistor ratio

RN1106

R1/R2

―

0.09

0.1

0.11

―

RN1102 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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