K4115 datasheet(2/3 Pages) TOSHIBA

2 / 3 page

2SK4115

2007-07-24

Electrical Characteristics (Ta

= 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±30 V, VDS = 0 V

⎯

±10

μA

Drain-source breakdown voltage

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

⎯

Drain cutoff current

IDSS

VDS = 720 V, VGS = 0 V

⎯

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

900

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3.5 A

⎯

1.6

2.0

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID = 3.5 A

3.5

5.0

⎯

Input capacitance

Ciss

⎯

1650

⎯

Reverse transfer capacitance

Crss

⎯

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯

140

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

⎯

240

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge

Qgs

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ∼− 400 V, VGS = 10 V, ID = 7 A

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

⎯

Pulse drain reverse current

(Note 1)

IDRP

⎯

Forward voltage (diode)

VDSF

IDR = 7 A, VGS = 0 V

⎯

−1.7

Reverse recovery time

trr

⎯

1400

⎯

Reverse recovery charge

Qrr

IDR = 7 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯

μC

Marking

Duty <= 1%, tw = 10 μs

0 V

10 V

VGS

RL = 114 Ω

VDD ∼− 400 V

ID = 3.5 A

VOUT

K4115

TOSHIBA

Lot No.

A line indicates

Lead (Pb)-Free

Part No. (or abbreviation code)

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