TLP3064(S)

2007-10-01

2

CHARACTERISTIC

SYMBOL

RATING

UNIT

Forward Current

30

mA

Forward Current Derating (Ta≥25°C)

−0.3

mA /°C

Peak Forward Current (100μs pulse, 100pps)

1

A

Reverse Voltage

5

V

Junction Temperature

Tj

125

°C

Off-State Output Terminal Voltage

600

V

Ta=25°C

100

On-State RMS Current

Ta=70°C

50

mA

On-State Current Derating (Ta≥25°C)

-1.1

mA /°C

Peak On-State Current (100μs pulse, 120pps)

2

A

Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%)

1.2

A

Junction Temperature

115

°C

Storage Temperature Range

−55~150

°C

Operating Temperature Range

−40~100

°C

Lead Soldering Temperature (10s)

260

°C

Isolation Voltage (AC,1min. , R.H.≤60%)

(Note 2)

5000

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 2) Device considered a two terminal device:Pins1, 2 and 3 shorted together and pin 4 and pin 6 shorted

together.

Recommended Operating Conditions

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply Voltage

—

—

240

Forward Current

4.5

6

7.5

mA

Peak On-State Current

—

—

1

A

Operating Temperature

−10

—

85

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.