20DL2CZ47A,20FL2CZ47A

2006-11-08

1

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

20DL2CZ47A, 20FL2CZ47A

SWITCHING MODE POWER SUPPLY APPLICATION

CONVERTER & CHOPPER APPLICATION

Repetitive Peak Reverse Voltage

Low Switching Losses and Low Output Noise

CHARACTERISTIC

SYMBOL

RATING

UNIT

20DL2CZ47A

200

Repetitive Peak

Reverse Voltage

20FL2CZ47A

300

V

Average Output Rectified Current

(Full Sine Waveform)

20

A

100 (50Hz)

Peak One Cycle Surge Forward

Current (Non−Repetitive)

110 (60Hz)

A

Junction Temperature

−40~150

°C

Storage Temperature Range

−40~150

°C

Screw Torque

―

0.6

N·m

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

20DL2CZ47A

―

―

0.98

Peak Forward

Voltage

(Note 1)

20FL2CZ47A

―

―

1.3

V

Repetitive Peak Reverse Current

(Note 1)

―

―

50

μA

Reverse Recovery Time

(Note 1)

―

―

35

ns

Forward Recovery Time

(Note 1)

―

―

100

ns

Thermal Resistance

DC Total, Junction to Case

―

―

3.0

°C / W

Note 1: A value applied to one cell.

POLARITY

JEDEC

―

JEITA

―

TOSHIBA

12−10C1A

Weight: 2.0g

Unit: mm