CLH02

2006-11-08

1

TOSHIBA High-Efficiency Rectifier Silicon Epitaxial Type

CLH02

○

Switching Mode Power Supply Applications

• Surface-mount package

L−FLAT” (Toshiba package name)

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

300

V

Average forward current

3 (Note 1)

A

Peak one cycle surge forward current

(non-repetitive)

50 (50 Hz)

A

Junction temperature

−40~150

°C

Storage temperature range

−40~150

°C

Note 1: Tℓ

= 125°C

Rectangular waveform : (

α = 180°)

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

⎯

0.85

⎯

⎯

0.89

⎯

V

Peak forward voltage

⎯

1.05

1.3

Repetitive peak reverse current

⎯

⎯

10

μA

Reverse recovery time

⎯

⎯

35

ns

Forward recovery time

⎯

⎯

100

ns

Themal resistance

(junction to ambient)

Device mounted on a glass-epoxy

board (board size:50mm x 50mm)

(board thickness:1.6t)

(soldering land)

Cathode:5.7mm x 6.2mm

Anode :4.5mm x 3.4mm

⎯

⎯

100

°C/W

Themal resistance

(junction to lead)

⎯

⎯

⎯

5

°C/W

Unit: mm

①

②

① アノード

② カソード

②

CATHODE

①

ANODE

JEDEC

⎯

JEITA

⎯

TOSHIBA

3-4F1A

Weight: 0.15 g (typ.)