CLS02

2007-11-06

1

TOSHIBA Schottky Barrier Diode

CLS02

Switching-Mode Power Supply (Secondary-Rectification)

Applications (Low Voltage)

DC/DC Converter Applications

• Suitable for compact assembly due to small surface-mount package:

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

40

V

Average forward current

10 (Note.1)

A

Non-repetitive peak surge current

100 (50 Hz)

A

Junction temperature

−40~125

°C

Storage temperature range

−40~150

°C

Note1: Tℓ

= 75°C

Rectangular waveform (

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

⎯

0.36

⎯

⎯

0.41

⎯

V

Peak forward voltage

⎯

0.5

0.55

⎯

4.0

⎯

μA

Peak repetitive reverse current

⎯

0.03

1.0

mA

Junction capacitance

⎯

420

⎯

pF

Thermal resistance

(junction to ambient)

Device mounted on a glass-epoxy

board

(board size: 50 mm

× 50 mm)

(board thickness: 1.6 t)

(soldering land)

Cathode 5.7 mm × 6.2 mm

Anode

4.5 mm × 3.4 mm

⎯

⎯

100

°C/W

Thermal resistance

(junction to lead)

⎯

⎯

⎯

5

°C/W

Unit: mm

0.6

± 0.1

4

± 0.2

1.5

± 0.1

2.7

± 0.2

①

②

①

ANODE

②

CATHODE

1.2

± 0.1

JEDEC

⎯

JEITA

⎯

TOSHIBA

3-4F1A

Weight: 0.15 g (typ.)