HAF1004L datasheet(5/10 Pages) RENESAS

Part #	HAF1004L

Description	Silicon P Channel MOS FET Series Power Switching

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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5 / 10 page

HAF1004(L), HAF1004(S)

Rev.5.00, Apr.29.2003, page 5 of 10

–1.6

–2.0

–1.2

–0.8

–0.4

–2

–4

–6

–8

–10

Pulse Test

Gate to Source Voltage VGS (V)

Drain to Saturation Voltage vs.

Gate to Source Voltage

–0.1

–0.2

–0.5

–1

–2

–5

–10

1000

200

500

100

Drain Current ID (A)

Static Drain to Source State Resistance

vs. Drain Current

500

400

300

200

100

–25

100

125

Pulse Test

Case Temperature Tc (

°C)

Drain to Source On State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

–2.5 A

= –5 A

–1 A

= –10 V

= –4 V

–1 A

= –5 A

–2.5 A

-2.5 A

–5 A

–0.01

–0.1

–1

–10

0.5

0.2

0.1

0.01

0.02

0.05

Tc = –25

°C

= –10 V

Pulse Test

= –4 V

–10 V

Pulse Test

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