M58BW016DB datasheet(1/69 Pages) STMICROELECTRONICS

Part #	M58BW016DB

Description	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

PDF	69 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 69 page

October 2007

Rev 14

1/69

1

M58BW016DB M58BW016DT

M58BW016FT M58BW016FB

16 Mbit (512 Kb x 32, boot block, burst)

3 V supply Flash memories

Features

■

Supply voltage

–VDD = 2.7 V to 3.6 V for Program, Erase

and Read

–VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O

buffers

–VPP = 12 V for Fast Program (optional)

■

High performance

– Access times: 70, 80 ns

– 56 MHz effective zero wait-state Burst

Read

– Synchronous Burst Read

– Asynchronous Page Read

■

Hardware block protection

–WP pin for Write Protect of the 4 outermost

parameter blocks and all main blocks

–RP pin for Write Protect of all blocks

■

Optimized for FDI drivers

– Fast Program / Erase Suspend latency

time < 6 µs

– Common Flash interface

■

Memory blocks

– 8 parameters blocks (top or bottom)

– 31 main blocks

■

Low power consumption

– 5 µA typical Deep Power-down

– 60 µA typical standby for M58BW016DT/B

150 µA typical standby for M58BW016FT/B

– Automatic standby after Asynchronous

Read

■

Electronic signature

– Manufacturer code: 20h

– Top device code: 8836h

– Bottom device code: 8835h

■

ECOPACK® packages available

PQFP80 (T)

BGA

LBGA80 10 × 12 mm

www.st.com

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