CMC02

2006-11-06

1

TOSHIBA RECTIFIER SILICON DIFFUSED TYPE

CMC02

For Strobe Discharge Circuit

• Small surface-mount

Characteristic

Symbol

Rating

Unit

Repetitive peak reverse voltage

400

V

Average forward current

1.0 (Note 1)

A

Peak one-cycle surge forward current

(non-repetitive)

30 (50 Hz)

A

Repetitive peak forward current

(Note 2)

150

A

Junction temperature

−40~150

°C

Storage temperature range

−40~150

°C

Note 1: Ta＝92°C

Device mounted on a ceramic board

Board size: 50 mm

× 50 mm

Soldering land: 2 mm

×2 mm

Board thickness: 0.64t

Note 3: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Peak forward voltage

⎯

0.88

1.0

V

Peak repetitive reverse current

⎯

⎯

10

μA

Device mounted on a ceramic board

(board size: 50 mm

× 50 mm)

(soldering land: 2 mm

× 2 mm)

(board thickness: 0.64 t)

⎯

⎯

60

Device mounted on a glass-epoxy board

(board size: 50 mm

× 50 mm)

(soldering land: 6 mm

× 6 mm)

(board thickness: 1.6 t)

⎯

⎯

110

Thermal resistance

(junction to ambient)

Device mounted on a glass-epoxy board

(board size: 50 mm

× 50 mm)

(soldering land: 2.1 mm

× 1.4 mm)

(board thickness: 1.6 t)

⎯

⎯

180

°C/W

Thermal resistance

(junction to lead)

⎯

⎯

⎯

16

°C/W

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

3-4E1A

Weight: 0.023 g (typ.)