CMF02

2007-04-16

1

TOSHIBA Fast Recovery Diode Silicon Diffused Type

CMF02

Switching Mode Power Supply Applications

DC/DC Converter Applications

• Suitable for compact assembly due to small surface-mount package

Characteristic

Symbol

Rating

Unit

Repetitive peak reverse voltage

600

V

Average forward current

1.0 (Note 1)

A

Peak one-cycle surge forward current

(non-repetitive)

10 (50 Hz)

(Note 3)

A

Junction temperature

−40~150

°C

Storage temperature range

−40~150

°C

Note 1: Tℓ

= 108°C

Rectangular waveform (

α = 180°)

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 3: This rating specifies the non-repetitive peak current in one cycle of a 50 Hz sine wave, condition angle 180

°.

Therefore the rating applies only to abnormal operation, which seldom occurs during the lifespan of a device.

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

3-4E1A

Weight: 0.023 g (typ.)